Characterization and nonuniformity correction of a resistor array infrared scene projector

Ever increasing developments in imaging infrared (IR) seekers that are being designed for Ballistic Missile Defense Office (BMDO) guided interceptor programs have amplified the necessity for robust hardware-in-the-loop (HWIL) testing to reduce program risk. Several candidate HWIL IR projection technologies are under development. This paper addresses the characterization measurements of a 128 X 128 metal-oxide semiconductor field-effect transistor (MOSFET) resistor array scene projector. The measurements include spectral output performance, dynamic range, spectral apparent temperature, uniformity, rise time, fall time, droop percentage, and current consumption. With possibly the exception of hot target simulation, the resistor array has the ability to spatially, spectrally, and temporarily function as the scene projector for a HWIL facility.