Method for quickly growing abundant M-phase vanadium dioxide nanowires by using pulse laser deposition technique

The invention provides a method for quickly growing abundant M-phase vanadium dioxide nanowires by using a pulse laser deposition technique, which comprises the following steps: selecting a VO2 target with the purity of 99.5-99.99%, and putting the VO2 target into a vacuumizable chamber; and controlling the background vacuum degree, oxygen pressure magnitude, deposition temperature, annealing temperature, annealing time, laser power, laser frequency, laser pulse count and substrate of the chamber. By using the pulse laser deposition technique and using the vanadium dioxide target as the sputtering material, the raw material is simple. The sputtering is performed in an O2 atmosphere. The reaction raw material and reaction process are nontoxic, harmless and environment-friendly. The growth method is simple and easy to operate. The temperature required by growing the VO2 (M) nanowires is low. The method can obtain abundant nanowires with excellent shape, structure and length-diameter ratio in a very short time. The obtained material can be widely used in resistance switches, battery materials, thermosensitive components, chemical sensors and the like.