SILK compatibility with the IMD process using copper metallization

Abstract This work presents the results of SILK compatibility with the materials used in the damascene structure with copper metallization. Firstly, the thermal stability of the material was carefully evaluated; excellent stability at 450°C was confirmed. Moreover, 450°C is a good curing temperature for obtaining a low dielectric constant (2.7). The conventional PECVD hard masks, SiO 2 (from SiH 4 or TEOS precursors) and Si x N y do not affect the SILK properties. Finally, it was verified that an OMCVD TiN barrier is efficient in preventing copper diffusion. It was demonstrated that SILK should reach the performance requested for IMD materials in the damascene structure with Cu metallization.