Plasma model for charging damage

The mechanism responsible for charging damage to integrated circuit device insulators is treated as a plasma phenomenon, in which the beam/plasma drives potential differences on the process surface. J−V data obtained with the CHARM2 diagnostic in a high current implanter (flood OFF) are fit with a plasma probe model. The fit indicates plasma buildup over the wafer surface. A cold plasma flood is suggested as a means of limiting potential differences during ion implantation.