Peculiar properties of SiOx:In, Sn orienting films obtained by RCS method

Technology of SiO x :In,Sn aligning films deposited by reactive cathode sputtering (RCS) method is presented. The influence of In, Sn alloy surface concentration in Si cathode target on aligning film properties are investigated by the AFM and optical profilometry methods. The properties of aligning microrelief obtained by RCS method for different In, Sn concentration and by poliimid rubbing method are compared. It was shown that such aligning microrelief can create defectiess and perfect on the microscopic level nematic LC oriented structures.