14/16nm FinFET Radiation Response Characterization

Abstract : Radiation response characterization test chipshave been designed and fabricated for bulk and SOIFinFETs at the 14/16nm technology node. Heavy-ion data,over ion energy and supply voltage, shows bulk FinFETNAND-based DICE-style flip-flop designs to besignificantly harder than standard D-Flip-Flop (DFF)designs for normal incidence irradiation. Heavy-ionirradiation data for the SOI designs will be included in theconference presentation and paper.