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急峻なSSを持つPN-Body Tied SOI FETを用いた高効率RFエネルギーハーベスティング用Gate Controlled Diodeの特性 (シリコン材料・デバイス)
急峻なSSを持つPN-Body Tied SOI FETを用いた高効率RFエネルギーハーベスティング用Gate Controlled Diodeの特性 (シリコン材料・デバイス)
2017
syun momose
zirou ida
takayuki mori
takahiro yosida
junpei iwata
takasi horii
takahiro furuta
takumi yamada
daiti takamatu
kenzi itou
kouitirou isibasi
yasuo arai
Keywords:
Subthreshold slope
Silicon on insulator
Electronic engineering
Physics
Optoelectronics
rf energy harvesting
Materials science
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