Novel PZT Crystallization Technique by Using Flash Lamp for FeRAM Embedded LSIs and 1Tr FeRAM Devices

are exhibited in Fig.4. when the films were crystallized by flash lamp granular PZT grains were obtained that were different from normally RTA-crystallized films with columnar structures. This is probably due to homogenious crystallization mechanism by the irradiation and impulse thermal process. The films show random orientation not along even on (111) oriented Pt films. The results also say that amorphous PZT can transform to perovskite ferroelectric phase for a very short period of time like 1msec.. An example of electrical properties is shown in Fig.6. The capacitor has a Ru top electrode followed by 350°C furnace annealing to form a good top electrode interface.