Temperature impact on linearity and analog/RF performance metrics of a novel charge plasma tunnel FET

The authors demonstrate a novel Charge-Plasma structure of Tunnel FET in which two different metal strips are implanted in oxide region to improve overall device’s performance. However, effect of temperature on the TFET is an important aspect to check the reliability of the device at different temperatures. So, a detailed study is done for the sensitivity of device toward temperature. Different parameters such as transfer characteristics, subthreshold slope (SS) and Threshold voltage ( $$V_{T}$$ ), whereas transconductance ( $$g_{m}$$ ), gate-to-drain capacitance ( $$C_{gd}$$ ), gate-to-source capacitance ( $$C_{gs}$$ ), intrinsic delay, transconductance generation factor (TGF), transconductance frequency product (TFP) and cutoff frequency ( $$f_{T}$$ ) are used as Analog/RF FOMs to carry out temperature analysis. Furthermore, the linearity parameters like gm2, VIP2, IMD3, gm3, VIP3 and IIP3 also show dependence on temperature which are studied in this work.