State-of-the-Art RFCMOSandSiGeBiCMOSTechnologies

Thechoice oftechnology fortoday's mixed- signal/RF system-on-chip (SOC)designs hasbeendriven by theperformance enhancements andcostadvantage derived fromscaled CMOS technologies. Thispaper willdiscuss the performance improvements ofRF transistors resulting from technology downscaling. Comparisons betweenscaled RF CMOS andSiGeBiCMOStechnologies tohighlight the benefits ofemploying SiGeHBTdevices incertain applications will bemade.Othertechnology enablements discussed include accurate, scalable models andstatistical models toaddress the needfordesignflexibility and robustmanufacturing. Thereafter theintroduction ofhighQ inductors, highdensity capacitors andvaractors asbasic passive components forRF circuits willbediscussed. Analogrequirements suchas mismatch, temperature linearity andvoltage linearity will also bediscussed. IndexTerms- RFCMOS,SiGeBiCMOS,fifm,,a, scalable models, statistical models, inductors, MIM capacitors, VPP capacitors, MOSvaractors, mismatch, linearity.