Fabrication of three-layer silicon antireflection structures in200–450 GHz using deep reactive ion etching
2021
We developed broadband antireflection structures for millimeter-wave
and submillimeter-wave applications, particularly cryogenic applications.
The structures were fabricated on silicon using deep reactive ion etching.
Three-layer subwavelength structures were fabricated on both sides of a
silicon plate with an area of 20mm2. The
transmittances of the structures were measured at 28 K. The average
transmittance was 97.6% in the frequency range of 200–450 GHz.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
24
References
0
Citations
NaN
KQI