Properties of Thin Inter-Polysilicon Reoxidized Nitrided Oxides Prepared by Rapid Thermal Processing (RTO/RTN/RTO)

In the search of a high quality thin inter-polysilicon dielectric which has high breakdown voltage and low leakage current for high density non-volatile memory applications, thin (150±) inter-polysilicon reoxidized nitrided oxide capacitors were fabricated with multiple rapid thermal processing. While rapid thermal nitridation degraded the breakdown field if compared to the rapid thermal oxide capacitors, rapid thermal reoxidation greatly enhanced the dielectric strength of the rapid thermal nitrided samples. The short reoxidations increased the film thickness by less than 10 \. Breakdown field of optimized inter-polysilicon RTO/RTN/RTO capacitors up to 14 MV/cm has been measured.