A-C Phase Orientation in Thin Film Growth of YBa2Cu3Ox in Higher Temperature Region
2000
Substrate temperature (TS) dependence of a-c phase orientation was investigated in growth of YBa2Cu3Ox thin films by ion beam sputtering with supply of either oxygen molecules or plasma in TS range of 600–700°C. The growth of a-phase dominates over the c-phase at 600°C and the ratio of a-phase decreases while that of c-phase increases with increasing TS. The growth of a-phase is enhanced by the plasma supply in TS <660°C. Mechanisms of a-c orientation are discussed in terms of surface migration and surface energy during the growth.
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