SUPPRESSION OF TRANSIENT ENHANCED DIFFUSION BY LOCAL-OXIDATION-SILICON-INDUCED STRESS

We evaluated the transient enhanced diffusion (TED) of boron on two different local oxidation silicon (LOCOS) structures. Boron profiles were measured by secondary ion mass spectroscopy (SIMS) sputtering from the back surface of the wafers to eliminate any effects caused by uneven surfaces of the LOCOS structures. To evaluate the TED at the surface, we also measured the threshold voltage roll-off of n-type metal-oxide-semiconductor transistors. The TED of boron was suppressed for the LOCOS structure with a high mechanical stress.