Impact of Oxygen Reservoir Layer on Analog Resistance Change Behavior in TaO x Resistance Analog Neuromorphic Device

The appropriate choice of the reservoir layer improves the continuity of analog resistance change (ARC) characteristics during the resistance decrease process in TaO x -based resistance change device (RAND). When the moderately resistive oxygen reservoir (OxR) layer is introduced between the electrode and highly resistive oxide layers, the competitive resistance increase (reset) process occurs under the voltage polarity required for the resistance decrease (set) process. The utilization of such competitive process is thought to be effective for the improvement of ARC.