Numerical analysis of InxGa1−xN/SnS and AlxGa1−xN/SnS heterojunction solar cells

Abstract In this work the photovoltaic properties of In x Ga 1 − x N/SnS and Al x Ga 1 − x N/SnS heterojunction solar cells are studied by numerical analysis. The photovoltaic performances of In x Ga 1 − x N/SnS solar cells are enhanced with the decreasing In content and the GaN/SnS solar cell exhibits the highest efficiency. The efficiencies of GaN/SnS solar cell improve with the increased SnS thickness and the reduced GaN thickness. For the Al x Ga 1 − x N/SnS solar cells, there is electron barrier in the Al x Ga 1 − x N/SnS interface. The electron barrier becomes larger with increasing Al content and lead to the degraded efficiency of Al x Ga 1 − x N/SnS solar cells. The simulation contributes to designing and fabricating SnS solar cells.