SPUTTERING DEVICE, FILM PRODUCTION METHOD, SrRuO3-δ FILM, FERROELECTRIC CERAMIC, AND METHOD FOR PRODUCING SAME

Provided is a sputtering device that makes it possible to form a film having high crystallinity. One embodiment of the present invention is a sputtering device provided with: a sputtering target 14 and a holding section 13 for holding a substrate, said sputtering target 14 and said holding section 13 being positioned within a chamber 11; an output supply mechanism 16 that supplies high-frequency output at 10 KHz to 30 MHz to the sputtering target in a pulsed state at a duty ratio of 25 to 90% and at a cycle of 1/20 to 1/3 ms; a gas supply source 17; and a vacuum evacuation mechanism 19. The sputtering target comprises Sr f Ru g O h or Sr f (Ti 1-x Ru x ) g O h and f, g, h, and x satisfy formulas 2 to 5 indicated below. Formula 2: 0.01 ≤ x ≤ 0.4. Formula 3: f = 1. Formula 4: 1.0 < g ≤ 1.2. Formula 5: 2 ≤ h ≤ 3.