Characteristics of GaSb and GaInSb layers grown by metalorganic vapor phase epitaxy

2008 
GaInSb and GaSb layers have been grown on GaSb and GaAs substrates using metalorganic vapor phase epitaxy (MOVPE) with trimethylgallium, trimethylindium, and trimethylantimony as the sources. As grown layers were p‐type with the carrier concentration in the mid‐1016 cm−3 range. N‐type layers were grown using diethyltellurium as the Te source. Incorporation of Te in high concentration showed compensation and secondary ion mass spectrometry (SIMS) result showed that only 2.5% of Te are active when 2×1019 cm−3 of Te was incorporated. The carrier concentration measured in n‐type samples increased as the temperature is lowered. This is explained by the presence of second band close to the conduction band minima. Silane, which is a common n‐type dopant in GaAs and other III–V systems, is shown to behave like p‐type in GaInSb‐. P‐n junction structures have been grown on GaSb substrates to fabricate TPV cells.
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