Trimethylgallium

Trimethylgallium, Ga(CH3)3, often abbreviated to TMG or TMGa, is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN, AlGaInP, InGaP and AlInGaNP. Trimethylgallium, Ga(CH3)3, often abbreviated to TMG or TMGa, is the preferred metalorganic source of gallium for metalorganic vapour phase epitaxy (MOVPE) of gallium-containing compound semiconductors, such as GaAs, GaN, GaP, GaSb, InGaAs, InGaN, AlGaInP, InGaP and AlInGaNP. TMG is a clear, colorless, pyrophoric liquid. Even the hydrocarbon solutions of TMG, when sufficiently saturated, are known to catch fire on exposure to air. TMG is known to react violently with water and other compounds that are capable of providing labile and active hydrogen (i.e. protons). Therefore, TMG needs to be handled with care and caution, e.g. stored in a cool, dry place at 0-25 °C, under inert atmosphere, and ensuring that storage temperatures would not exceed 40 °C to avoid deterioration. Trimethylgallium may be prepared by the reaction of dimethylzinc with gallium trichloride. The less volatile diethyl ether adduct can be prepared by using methylmagnesium iodide in ether in place of dimethylzinc; the ether ligands may be displaced with liquid ammonia as well.