Characterization and Modeling of Flicker Noise in FinFETs at Advanced Technology node

1/f noise is characterized on thick and thin-gate oxide-based FinFETs for different channel lengths. The devices exhibit gate bias dependence in 1/f noise even in the weak-inversion region of operation which cannot be explained by the existing flicker noise model. We attribute this phenomenon to the non-uniform oxide-trap distribution in energy or space. Based on our characterization results for nand p-channel FinFETs, we have improved the BSIMCMG industry standard compact model for the FinFETs. The improved model is able to capture the 1/f noise behavior over a wide range of biases, channel lengths, fin numbers, and number of fingers.