PROGRESSIVE BREAKDOWN CHARACTERISTICSOFHIGH-K/METAL GATE

Breakdown characteristics ofHf-based high-k dielectrics ina widethickness range wereinvestigated toidentify the"weaklink" in thegatestackanditsleading breakdown mechanisms under inversion stress. A strong correlation amongthegrowth rates ofthe stress leakage current, SILC, andinterface trapdensity suggests that breakdown istriggered bytrapgeneration intheinterfacial SiO2 layer. Stress-time evolution ofthedifferential resistance andits slope obtained fromSILCdataallows progressive breakdown inhighk/metal gate stacks tobeidentified.