Electronic properties of C60/InP(001) heterostructures

The growth of fullerene films on the InP(001)-(2 ? 4) surface and the formation of the C60/InP(001)-(2 ? 4) interface were studied by x-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, electron energy loss spectroscopy and low energy electron diffraction. C60 adsorption causes weak (~0.15?eV) upward band bending at the interface. Thick C60 films form an fcc (111) structure on the InP(001) surface. The (2 ? 4) reconstruction is preserved beneath the C60 film. The photoelectron measurements yield a valence band discontinuity of 0.88 ? 0.20?eV at the C60/InP(001)-(2 ? 4) interface.