Any-polar resistive switching behavior in LATP films

We demonstrate the coexistence and conversion of the unipolar and bipolar resistive switching behavior in Pt/Li1+xAlxTi2−x(PO4)3 (LATP)/Pt structures fabricated by sputtering. The dielectric constant (k) of the LATP film equals 12.0. After the electroforming, the Pt/LATP/Pt resistive switching device exhibits either unipolar switching mode (URS) or bipolar switching mode (BRS). The switching mode can be freely converted between URS and BRS with the same compliance current. This will provide a foundation for a switching mode called any-polar switching mode. The switching mechanism is believed to be related to the formation and rupture of conductive filaments and the excellent oxygen storage capacitance of the LATP film.We demonstrate the coexistence and conversion of the unipolar and bipolar resistive switching behavior in Pt/Li1+xAlxTi2−x(PO4)3 (LATP)/Pt structures fabricated by sputtering. The dielectric constant (k) of the LATP film equals 12.0. After the electroforming, the Pt/LATP/Pt resistive switching device exhibits either unipolar switching mode (URS) or bipolar switching mode (BRS). The switching mode can be freely converted between URS and BRS with the same compliance current. This will provide a foundation for a switching mode called any-polar switching mode. The switching mechanism is believed to be related to the formation and rupture of conductive filaments and the excellent oxygen storage capacitance of the LATP film.