Spatial characterization of a 2 in GaN wafer by Raman spectroscopy and capacitance–voltage measurements

Micro-Raman spectroscopy and capacitance–voltage (C–V) measurements have been used to investigate 2 in GaN epitaxial wafers grown by hydride vapour phase epitaxy on sapphire substrates. The position and line shape of the A1 longitudinal optical (LO) phonon mode were used to determine the carrier concentration at different locations across the wafer. The line-shape fitting of the Raman A1 (LO) coupled modes taken from horizontal lateral-different positions on the wafer yielded a rudimentary spatial map of the carrier concentration. These data compare well with a carrier density map of the wafer obtained by C–V measurements, confirming the non-uniform distribution of carrier concentration in the GaN epitaxial film and that Raman spectroscopy of the LO phonon–plasmon mode can be used as a reliable and production friendly wafer quality test for GaN wafer manufacturing processes.