Dissolution Characteristics And Surface Morphology Of Chemically Amplified Positive Resists In X-Ray Lithography

The surface morphology of chemically amplified resists was evaluated when a half-tone X-ray mask with high transmittance (low-contrast) was used. The morphology of the top surface of chemically amplified resists is strongly related to the differential of the dissolution rate as a function of the exposure dose, but it is not directly affected by the γ value. A smaller change results in a smoother surface for both positive and negative resists. Increasing the concentration of dissolution inhibitors with t-butoxy groups is an effective way of reducing the change in dissolution rate and making the top surface of a positive resist smooth while maintaining the resolution.