Preparation of a Bi $_{4}$ Ti $_{3}$ O $_{12}$ Thin Film and Its Electrical Properties

A BiTiO (BIT) thin film is prepared by sol-gel method using acetate precursors and evaluated whether it could be applied to NVFRAM (Non-Volatile Ferroelectric RAM). The drying and the annealing temperature are 40 and , respectively and they are determined from the DT-TG (Differential Thermal-Thermal Gravimetric) analysis. The BIT thin film deposited on Pt/Ta/SiO/Si substrate shows orthorhombic perovskite phase. The grain size and the surface roughness are about 100 nm and 70.2, respectively. The dielectric constant and the loss tangent at 10 KHz are 176 and 0.038, respectively, and the leakage current density at 100 ㎸/cm is 4.71 /. In the results of hysteresis loops measured at 250 ㎸/cm, the remanent polarization (Pt) and the coercive field (Ec) are 5.92 C/ and 86.3 ㎸/cm, respectively. After applying 10 square pulses of 5V, the remanent polarization of the BIT thin film decreases as much as about 33% from 5.92 C/ of initial state to 3.95 C/.