High speed performance of III-nitride laser diode grown on (2021) semipolar plane for visible light communication

III-nitride light emitting diodes (LEDs) have been used for many applications covering the spectrum of ultraviolet (UV) to visible light (VL). Despite of significant improvements on solid-state lighting, LEDs still suffer significant efficiency loss at high carrier density, commonly referred as "efficiency droop" [1]. However, compared to LEDs, laser diodes (LDs) have higher power per chip and the absence of efficiency droop above lasing threshold. In addition to the advantage of solid-state lighting, LDs can be modulated at much higher frequency than LEDs.