A Novel Low Voltage Low Power High Linearity Self-biasing Current-reuse Up-conversion Mixer

In this paper, a new complementary metal oxide semiconductor (CMOS) low-voltage low-power current-reuse up-conversion mixer using Chartered $$0.18\,\upmu \hbox {m}$$0.18μm CMOS process for radio frequency transmitter applications is presented. A novel self-biasing current-reuse (SBCR) technique is adopted to achieve more ideal conversion gain (CG) and third-order intermodulation intercept point $$(\hbox {IIP}_{3})$$(IIP3) in the transconductance stage with minimal additional power consumption, which perfects the mixer than conventional Gilbert mixer. As the new SBCR technique employed in the mixer, the post-layout simulation results demonstrate that the SBCR-mixer features about 13 dB CG with 0 dBm local oscillator (LO) power and port-to-port isolation better than 84 dB, while noise figure is 15.66 dB. The $$\hbox {IIP}_{3}$$IIP3 and 1 dB compression point of the mixer are 7.78 dBm and $$-$$-3.76 dBm at 1.41 mW power consumption from a 1 V supply voltage. The chip area is only $$0.70 \times \,0.72\,\hbox {mm}^{2}$$0.70×0.72mm2 even including test pads.