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221904 Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy (3 pages)
221904 Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy (3 pages)
2007
Yongjiang Wang
Viacheslav I. Lebedev
V. Cimalla
K. Tonisch
O. Ambacher
Ekhard K. H. Salje
H. Zhang
D. Schryvers
Barbora Bártová
Galia Pozina
Carl Hemmingsson
J. P. Bergman
David Huy Trinh
Lars Hultman
B. A. Monemar
Aniko Gadanecz
J. Bläsing
Armin Prof.Dr. Dadgar
C. Hums
A. Krost
Kedarnath Kolluri
M. Rauf Gungor
Dimitrios Maroudas
J. C. Woicik
C. Stephen Hellberg
Henry Li
J. Mei
Fernando Ponce
R. S. Qhalid Fareed
Jiawen Yang
Mohammad Asif Khan
R. B. Bogoslovov
C. Michael Roland
Raymond M. Gamache
Liang Cai
Shakib Morshed
Barton C. Prorok
Yinghui Lu
Yao-Gen Shen
Keywords:
Exciton
Optoelectronics
Halide
Wafer
Epitaxy
Inorganic chemistry
Materials science
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