Reliability Demonstration of a Ferroelectric Random Access Memory Embedded within a 130nm CMOS Process

Reliable operation of a 4 Mb ferroelectric random access memory (FRAM) embedded within a standard 130 nm CMOS process is demonstrated. Intrinsic endurance test to 5.4times10 12 cycles shows no degradation of switched polarization. 10 year, 85degC, data retention life is demonstrated with 125degC data bake to 1,000 Hrs with no fails.