Pathways toward higher performance CdS/CdTe devices: Te exposure of CdTe surface before ZnTe:Cu/Ti contacting

Abstract Many studies of thin-film CdS/CdTe photovoltaic devices have suggested that performance may be improved by reducing recombination due to Te-vacancy (V Te ), Te antisite (Te Cd ), or Te-interstitial (Te i ) defects. Although formation of these intrinsic defects is likely influenced by CdTe deposition parameters, it may be also coupled to the formation of beneficial cadmium vacancy (V Cd ) defects. In this study, we expose the CdTe surface to Te vapor prior to ZnTe:Cu/Ti contact-interface formation with the goal of reducing V Te without significantly reducing V Cd . Initial results show that when this modified contact is used on a CdCl 2 -treated CdS/CdTe device, poorer device performance results. This suggests two things: First, the amount of free-Te available during contact formation (either from chemical etching or Cu x Te or ZnTe deposition) may be a more important parameter to device performance than previously appreciated. Second, if processes have been used to reduce the effect of V Te (e.g., oxygen and chlorine additions), adding even a small amount of Te may produce detrimental defects.