InAl(Ga)N/GaN/SiC devices delivering 5W/mm output power at 30 GHz

We report on the performances of 0.1-μm gate length In Al(Ga)N/GaN HEMT devices on SiC substrate. Measurements results of DC, pulsed I-V, S-parameters and load-pull power performances are presented. Devices exhibited a maximum DC transconductance of 400mS/mm and drain current of 1.2A/mm at Vgs=1V. Cut-off frequencies Ft and Fmag of 60GHz and 140 GHz were obtained. Load-pull power measurements at 30GHz allowed us to achieve an output power density of 3W/mm with 40% of PAE at Vds=15V. Biased at Vds=20V, a maximum saturated output power density of 5W/mm was achieved.