Performance comparison of sub 1 nm sputtered TiN/HfO/sub 2/ nMOS and pMOSFETs

HfO/sub 2/ nMOSFETs and pMOSFETs were fabricated using scaled chemical oxides as a starting interface, together with sputtered (PVD) TiN gate electrodes. Aggressively scaled stacks of 8.2 /spl Aring/ EOT on nMOS and 7.5 /spl Aring/ EOT on pMOS were achieved with leakage current of <5 A/cm/sup 2/ at V/sub FB/ +1 volts. Low fixed charge density in the HfO/sub 2/ layer was observed from VFB extraction, using high frequency-CV measurements, when considering a TiN workfunction of 4.78 eV. Conventional C-V hysteresis and transient V/sub T/ instability measurements on sub 1 nm TiN/HfO/sub 2/ devices indicated reduced instability as a result of EOT scaling. The electron mobility is degraded with EOT scaling whereas hole mobility remains constant down to an EOT of 8 /spl Aring/.