Preparation and properties of transparent conductive N-doped CuAlO2 films using N2O as the N source

N-doped CuAlO2 films were prepared by RF magnetron sputtering on quartz substrates using N2O as the N source. N concentration in the films is detected by Auger electron spectroscopy in detail, which confirms that N is indeed incorporated into the films. The optical and electrical properties of transparent conductive N-doped CuAlO2 films are modulated by the N2O flow ratio in sputtering gas. The N-doped films have a visible transmittance of 60-70 % and a high infrared transmittance of similar to 85 %. The film deposited by using 15 % N2O flow ratio with the optimal crystalline is provided with a conductivity of 3.75 x 10(-2) S cm(-1) at room temperature, which improves over one order of magnitude compared with the undoped film. The enhanced conductive property is mainly originated from the ionization of acceptor impurities.