Nanoscale Devices for the end of the Roadmap

Future Nanoelectronic devices face substantial challenges, in particular increased power consumption, saturation of performance, large variability and reliability limitation. In this respect, novel device architectures using innovative materials will be needed for Nanoscale FETs. This paper presents promising solutions for the end of the roadmap with Multigate NanoMOSFETs, Tunnel transistors, Ferroelectric FET, and Hybrid Nanocomponents using ultra-thin films, 2D and 1D nanostructures including Nanowires and Nanotubes, Heterostructures, using SOI, Ge or III-V materials, Phase Change materials or Nanofilament, that will allow to boost the performance of these advanced nanotransistors.