Effects of growth process on the optical and electrical properties in Al-doped ZnO thin films

Aluminum doped zinc oxide (AZO) has attained prominence as being a very good transparent conducting oxide for optoelectronics and photovoltaic applications. In this work, we report on the synthesis and characterization of AZO films with c-axis preferred orientation using magnetron radio frequency (RF) sputtering. It was found that the degree of the c-axis preferred orientation can be controlled by varying the growth conditions, such as working pressure, RF power, and substrate temperatures. The preferred orientation increased as the working pressure decreased, while it increased as the RF power and substrate temperature increased. Electrical and optical measurements have revealed that the growth conditions and c-axis preferred orientation have strong influence on the physical properties of the synthesized AZO thin films. The thin films with increased c-axis preferred orientation exhibited enhanced carrier mobility.