Electron diffusion lengths in p‐type InP involved in indium tin oxide/p‐InP solar cells

Electron diffusion length measurements have been performed in p‐type InP by different methods: Surface photovoltage, spectrum analysis of the photocurrent in an Indium Tin Oxide/p‐InP diode, variation of the photovoltage in this diode versus reverse voltage, Electron Beam Induced Current measurements. The results are compared and discussed in detail. A double p‐type region model with different electron diffusion lengths has been proposed to explain the experimental results.