Mask process correction for optical weak pattern improvement

In 14nm process critical layer, the weak pattern due to complex pattern designs will be revised aggressively by (OPC) Optical Proximity Correction. Therefore, the optical properties of these patterns will be extremely unstable. (Ex. High MEEF or Low contrast) In this circumstance, the mask process variation will impact the distribution of optical intensity for weak patterns quite considerably. In order to reduce the impact of the mask process variation, we add MPC (Mask process proximity correction) technique. Revising the mask process of ideal OPC masks again can make the result of masks meet our expectations better. In the paper, we show the comparison between the weak pattern of high MEEF with MPC and Non-MPC. We not only compare the optical behavior with the SEM Contour but also compare the variation of the real wafer process window. By means of the method in this paper, using MPC technique can definitely reduce the impact of the mask process variation and improve lithographic performance for weak pattern.