Strain-mediated all-magnetoelectric memory cell

AbstractDownscaling of magnetoelectric random access memory device (MELRAM) is considered by studying an example of the hybrid structure based on ferroelectric-magnetostrictive metal. Elastic mechanism of magnetoelectric interaction is analyzed by numerical modeling taking into account inhomogeneous distribution of anisotropic strain, ferroelectric polarization and electric field. The proposed shape of the cell allows to decrease the inhomogeneity of the strain in the magnetic subsystem and to achieve remarkable dynamic characteristics for a nanometric device sized 50×50×400 nm3: we adopted an input voltage of V0 = 90 mV and obtained a switching time tS = 1.1 ns, an output readout voltage VME = 4.7 mV, and an ultra-low energy consumption 13 aJ/bit.