Spark plasma sintering of W-10Ti high-purity sputtering target: Densification mechanism and microstructure evolution

Abstract The densification mechanism and microstructure evolution of W-10Ti sputtering target prepared by spark plasma sintering (SPS) method at a temperature ranges from 900 to 1600 °C, with dwelling time of 6 min and fixed pressure of 30 MPa were investigated. Densification occurs mainly at low temperatures (900 to 1300 °C), while grain growth occurs at high temperatures (1400 to 1600 °C). The creep model has been used to reveal the densification process. The effective stress exponent n is calculated systematically, which indicates that the densification process is mainly due to the particle rearrangement (n