Design and simulation of GaN HEMT and its application to RF amplifiers

In this paper we propose a reduced channel AlGaN/GaN HEMT with high current densities and high frequency. Cut-off Frequency of 150 GHz has been obtained at V gs = −1 V. The device characteristics have been studied in details with variation in process parameters. The second part of the paper consists studying the linearity performance of the GaN HEMT for radio frequency application. Linearity parameters like IIP3 has been calculated.