PREPARATION OF WIDE BAND GAP MICROCRYSTALLINE SILICON FILM BY USING SIH2CL2

We have studied the growth of Cl incorporated microcrystalline silicon [μc‐Si(:Cl)]. The flow rates of H2 and SiH2Cl2 were varied to deposit wide band gap n+ μc‐Si(:Cl) films by using SiH4/SiH2Cl2/H2/PH3 mixtures. The n+ μc‐Si(:Cl) film deposited with SiH2Cl2/SiH4 = 1 exhibited a room temperature conductivity of 2 S/cm and an optical band gap of ∼2.0 eV that is at least 0.2 eV higher than that of conventional n+ μc‐Si. The surface morphology of the μc‐Si(:Cl) film is much rougher than that of conventional μc‐Si prepared by using SiH4/H2 plasma.