X-ray lithography technology for the fabrication of deep-submicron T-shaped gate

Because of its validity in reducing transistor noise due to gate parasitic resistance T-shaped structure has been applied for the fabrication of Pseudomorphic High Electron Mobility Transistor (PHEMT) device widely, X-ray lithography is the best way to fabricate deep-submicron T-shaped structure, because it has many advantages, such as large process latitude,high throughput, extremely long depth of focus,large exposure field sizes, low cost,and so on, and the more important thing is that X-ray lithography technology is relatively mature. In this paper, the home-made X-ray mask process is introduced first, and the influence of blur to the light intensity distribution on the surface of X-ray resist is analyzed, the three layer resist method which is used for the fabrication of deep -submicron T-shaped structure and the 75nm T-shaped structure result which was achieved in BSRF 3B1A beamline are presented lastly.