Point defect structure in CdTe and ZnTe thin films

The point defect structure (PDS) in CdTe and ZnTe thin films grown by the quasi-close volume method on different substrates was investigated. The films were analyzed by X-ray diffraction and scanning electron microscopy. To study the point defects the conductivity–temperature relationships and dark voltage–current characteristics using the theory of space charge limited currents were investigated. The deep energy levels in the band gap (BG) were studied by the method of injection spectroscopy. In the BG of both CdTe and ZnTe a range of trap centers and acceptors with different energy were revealed. To model the PDS in the films the quasi-chemical formalism was applied.