High-resolution spatial control of the threshold voltage of organic transistors by microcontact printing of alkyl and fluoroalkylphosphonic acid self-assembled monolayers

Abstract A dense array of 500 organic TFTs with two different threshold voltages arranged in a checkerboard pattern has been fabricated. The threshold voltages were defined by preparing self-assembled monolayers (SAMs) of either an alkyl or a fluoroalkylphosphonic acid on the gate-oxide surface of each TFT, using a combination of microcontact printing from an elastomeric stamp and dipping into a solution. The threshold voltages are −1.01 ± 0.15 V for the TFTs with the fluoroalkyl SAM and −1.28 ± 0.23 V for the TFTs with the alkyl SAM. ToF-SIMS analysis shows that the two SAMs can be patterned with a pitch of 10 μm and without significant cross-contamination. Cross-sectional TEM and NEXAFS characterization of the SAMs indicate that the properties of the SAMs prepared by microcontact printing and dipping are essentially identical.