High-performance InGaP power HBT technologies for wireless applications

Technological features of InGaP power HBTs for 5 GHz wireless-LAN applications are described. These features include self-aligned device structure, small-sized via-holes located adjacent to each transistor finger, and bias and feedback circuits for the reduction of distortion. These technologies improve both the gain and the linearity of power HBTs, producing high linearity and high power added efficiency in power amplifier MMIC.