Interfacial Adhesion Strength Characterization of SiCOH/TaN Stack by 4-Point-Bending

SiCOH film layers with different process steps are experimented to characterize the interfacial adhesion strength between tantalum nitride (TaN) and SiCOH film using the 4-Point-Bending (4PB) technique. Variation in critical load value Gc, an indicator of the interfacial adhesion strength, is observed. Auger Electron Spectroscopy (AES) is performed for elemental analysis to confirm the interface of delamination.