Method of removing SiGe film on wafer

The invention provides a method of removing SiGe film on a wafer. The method of removing the SiGe film on the wafer comprises the following steps of step1, firstly using etching liquid with a high etching rate to wash the wafer to remove most SiGe on the surface of the wafer, then using etching liquid with a lower etching rate to wash the wafer to remove residual SiGe on the surface of the wafer; step2, forming a layer of silica diode film on the surface of the wafer by using a furnace tube in a high-temperature oxidation mode; and step3, using hydrofluoric acid to remove the silica diode film on the surface of the wafer. The method of removing the SiGe film on the wafer can remove the SiGe film on the surface of the wafer, optimizes surface conditions, enables the wafer to be capable of being reused, and reduces process cost.