Room temperature ferromagnetism and ferroelectricity behavior of (Cu, Li) co-doped ZnO films deposited by reactive magnetron sputtering

Abstract Single-phase Zn 0.95− x Cu x Li 0.05 O thin films have been prepared on Pt (1 1 1)/Ti/SiO 2 substrates by reactive magnetron sputtering method. The XRD, XPS and absorption measurements confirmed the polycrystalline nature of the films and the substitution of Zn 2+ by Cu 2+ ions. The sputtered Zn 0.90 Cu 0.05 Li 0.05 O film shows multiferroic properties exhibiting a saturated ferroelectric loop with a remanent polarization of 6 μC/cm 2 and a saturated loop with a saturation magnetization of 0.43 μ B /Cu at room temperature. The origins of the ferromagnetism and ferroelectricity in these films are discussed.