On the Bonding and Electrochemical Performance of Sputter Deposited WO3 Thin Films

Tungsten oxide (WO3) thin films have attained a distinct and special place in the field of electrochromism. Therefore, any sort of study towards this material will invariably has lot of importance and technological significance. The films of WO3 were deposited by reactive magnetron sputtering at various partial pressures and annealed at 475C. There is a tremendous change in the bonding characteristics, which eventually shows significant change in the optical and electrochemical behavior. The bandgap of WO3 films is found to be increasing with different oxygen partial pressure. A systematic study of cyclic voltammetry has been done to analyze the electrochemical behavior of WO3 films. Oxidation and reduction peak currents have shown an increasing trend with the oxygen partial pressure. Raman spectroscopy has revealed the improvement in the atomic ordering in WO3 films.